FINAL PROGRAM

ICNDST-8

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Sunday 21 July 2002

16:30.17.30	Registration at St Mary’s College
18.00-19.30	Welcome Reception at the Ian Potter Museum of Art

Monday 22 July 2002

07.45	Registration in the Foyer of the Architecture Building
08.45	Welcome and Introduction – Prince Phillip Theatre, Architecture Building

Opening Session

Chair:

R. Kalish (Technion, Israel)

9:00	1.1	Invited Presentation: “Diamond Growth from Gases: Where are we going? And How did we get here?” J.E.Butler (Naval Research Laboratory,USA)
9:30	1.2	Invited Presentation: “Small is beautiful: Ultrananocrystalline Diamond Films” D.M.Gruen (Argonne National Laboratory, USA)
10:00	1.3	Invited Presentation: “Nanoelectronics based on diamond surfaces H. Kawarada^1, 2, M. Tachiki^1, 2, H.Umezawa^1, 2 (^1Waseda University, Japan) (^2CREST JST, Japan)

10:30-11.00

COFFEE BREAK & POSTER VIEWING

Session 2: Growth and Doping

Chair:

J.E.Butler (Naval Research Laboratory,USA)

11:00	2.1	Invited Presentation: “Synthesis and characterization of diamond films and carbon nanomaterials by laser ablation of graphite in O2 atmospheres” M. Yoshimoto, K. Makajima, A.Sasaki, T. Yamamoto (Tokyo Institute of Technology, Japan)
11:30	2.2	Co-doping of diamond with sulfur and boron S.C.Eaton^1, A.B.Anderson^2, J.C.Angus^1, Y.E.Evstefeeva^3, and Yuri V. Pleskov^3 (^1Chemical Engineering Department, Case Western Reserve University, USA) (^2Chemistry Department, Case Western Reserve University, USA) (^3Frumkin Institute of Electrochemistry, Russia)
11:50	2.3	New theory of CVD Diamond Growth by Charged clusters N.M Hwang^1, 2, and D.Y.Kim^1 (^1Center for Microstructure Science of Materials, Seoul National University, Korea) (^2Korea Research Institute of Standards and Science, Korea)
12:10	2.4	Characterization of 5-inch free-standing diamond wafers deposited by single-cathode DC PACVD W.S.Lee^1, Y.J.Baik^1 and K-W,Chae^2 (^1Thin Film Technology Research Center, Korea Institute of Science and Technology) (^2Precision Diamond Company)
12:30	2.5	Optical Raman Dark Resonances for Quantum Computing in N-V Diamond P.R. Hemmer^1 and M.S. Shahriar^2 (^1 Department of Electrical Engineering, Texas A&M University, Texas, USA) (^2 Department of Electrical and Computer Engineering, Northwestern University, Evanston, IL, USA)

12:50-14:15

LUNCH & POSTER VIEWING

Session 3: Field and Electron Emission

Chair:

W.I.Milne (Cambridge University, UK)

14:15	3.5	Electron emission from Boron doped diamond induced by molecular ions R. Kalish V. Richter, N. Koenigsfeld Y. Avigal and E. Cheifetz
14:45	3.2	Spiky diamond field emitter Y.Ando^1, Y. Nishibayashi^1, H.Furuta^2, K.Kobashi^1, T.Hiraov^3, and K.Oura^3 (^1Center for Advanced Research Projects) (^2New Energy and Industrial Technology Development Organization – NEDO) (^3Faculty of Engineering, Osaka University)
15:05	3.3	Field emission from SiC Nanotip Arrays K-H. Chen^1, J.S. Hwang^1, H.C.Lo^1, D.Das^1, and L-C. Chen^2 (^1Institute of Atomic and Molecular Sciences, Academia Sinica, Taiwan) (^2Center for Condensed Matter Sciences, National Taiwan University, Taiwan)
15.25	3.6	Field emission properties of diamond particles with thin diamond overcoat grown by chemical vapor deposition A.Watanabe, and M.Kitabatake

15:45-15:55

COFFEE BREAK & POSTER VIEWING

17:15-18:45

POSTER PREVIEW SESSION 1

Authors who have agreed to participate will make a short, maximum 3 minute, one overhead transparency, oral presentation that serves to 'advertise' the main point of the poster.

P1.01.1	J E Butler	Analysis of Large Single Crystal CVD Diamond J.E.Butler, T.A.Kennedy, J.Colton,S.Qadri, R.Linares and P.Doering
P1.01.2	H.W.Chen	The 3-D structure of polycrystalline diamond films by electron backscattering diffraction (EBSD)
P1.01.5	N.M Hwang	Which does stabilize diamond over graphite in the diamond CVD process, atomic hydrogen or electric charge?
P1.01.13	D.S.Misra	Microporous diamond films on zeolites by CVD method
P1.01.14	Miguel E.Mora-Ramos	Hole states in boron-delta-doped diamond
P1.01.15	T.Oku	Formation, atomic structures and structural optimization of tetrahedral carbon onion
P1.01.17	J.R.Petherbridge	Sulfur addition to CH4/CO2 diamond CVD gas mixtures: growth studies and gas phase investigations
P1.01.18	J.R.Petherbridge	Simulation of H-C-S containing diamond CVD gas mixtures
P1.01.23	B.V.Spitsyn	Nucleation by activated diamond CVD
P1.01.25	H. Yoshikawa	Characteristics of an abnormal DC glow discharge for diamond synthesis
P1.01.26	Tai-Fa Young	Characterization of Boron doped Diamond Thin Film Grown on Porous Silicon
P1.02.3	A.V.Karabutov	BN and SiO2 can replace diamond in nanostructured carbon low-field emitters
P1.02.4	A.V.Karabutov	Low-field electron emission of self organized micro-tip arrays with incorporated nanotubes produced by laser beam evaporation
P1.02.5	A.V.Karabutov	Can oxidation improve field electron emission of diamond nanomaterials
P1.02.6	Bean-Jon Li	Emission Properties of Carbon Nanotubes field Emitter
P1.02.11	Akira Yamamoto	Field emission from Carbon Films Deposited on Steel Substrate
P1.02.13	Zhou Ji-cheng	Simulation on I-V characteristics of carbon nanotube's self-assembly system
P1.03.1	M.Belmonte	Acoustic emission detection of macro-indentation cracking mechanisms of diamond coating on silicon
P1.03.4	K.Iakoubovskii	ESR and optical defects in as-grown and irradiated CVD diamond
P1.03.8	P.W.May	Stiffness Measurements of Diamond Fibre Reinforced Plastic Composites
P1.03.9	N.N.Melnik	Surface and bulk states of disordered carbon and their optical properties
P1.03.12	D.S.Misra	Effect of Heavy Ion irradiation on self supported diamond sheets
P1.03.17	I.Sh. Trakhtenberg	The application of microhardness method for measurement and attestation of hard coatings
P1.03.18	E.Trajkov	Thermally stimulated current analysis of Ion Implanted Synthetic Diamond
P1.04.1	M.-C.Castex	Bulk Photoconductivity of CVD diamond films for UV and XUV detection
P1.04.2	K.K.Hirakuri	Deposition of DLC Films on polymeric materials for biomedical applications
P1.04.5	H.Matsudaira	Deep sub-micron gate diamond MISFETs
P1.04.6	E.Pace	2-D imaging arrays on CVD diamond
P1.04.7	E.Pace	Spectral response of large area CVD diamond photoconductors for space applications in the deep UV
P1.05.9	A.Madronero	Possibilities of improving mechanical and electrical properties of Portland cement by addition of carbon nanotubes
P1.05.10	P.W.May	Observations of nanotube and 'celery' structures following diamond CVD on single crystal diamond substrates

18:45-21:00

BBQ & POSTER SESSION 1

POSTER SESSION 1

Session P1.01: Growth and Doping

P1.01.1	Analysis of Large Single Crystal CVD Diamond J.E.Butler^1, T.A.Kennedy^1, J.Colton^1,S.Qadri^1, R.Linares^2 and P.Doering^2 (^1Naval Research Laboratory, USA) (^2Apollo Diamond Inc., USA)
P1.01.2	The 3-D structure of polycrystalline diamond films by electron backscattering diffraction (EBSD) H.W.Chen, V.Rudolph (Department of Chemical Engineering, Queensland University, Australia)
P1.01.3	The effect of ionic hydrogen on the growth of micro-crystal diamond via solid carbon source in the atmosphere of microwave hydrogen plasma Xiaohu Chen (Department of Materials Science and Engineering, Hua Qiao University, P.R.China)
P1.01.4	A Molecular Dynamics Simulation of Boron in Diamond X.J.Hu, Y.B.Dai, R.B.Li, H.S.Shen, X.C.He (State Key Lab of MMCM’s, Shanghai Jiaotong University P.R.China)
P1.01.5	Which does stabilize diamond over graphite in the diamond CVD process, atomic hydrogen or electric charge? N.M Hwang^1, D.Y.Kim^2 (^1Center for Microstructure Science of Materials, Seoul National University, Korea) (^2Korea Research Institute of Standards and Science, Korea)
P1.01.6	Mechanism of heteroepitaxial growth of diamond films H.Ishigaki, T.Kimura and S.Yugo (University of Electro-Communications, Japan)
P1.01.7	Optical emission spectroscopic studies on the positive bias effects in plasma-assisted chemical vapor deposition of diamond H.Isshiki, M.Nojiri, N.Ishigaki, T.Kimura and S.Yugo (University of Electro-Communications, Japan)
P1.01.8	Large Area Deposition of Diamond Powders by Direct Current Plasma Assisted Chemical Vapor Deposition (DC PACVD) Method Jae-Kap Lee^1, Seung-Hyeob Lee^1, Young-Joon Baik^1, Kwang Yong Eun^1, Jin-yul Lee^2 and Jon-Wan Park^2 (^1Thin Film Technology Research Center, Korea Institute of Science and Technology, Korea) (^2Department of Metallurgical Engineering, Hanyang University, Korea)
P1.01.9	Single-cathode DC PACVD process for large-area diamond wafer fabrication W.-S. Lee^1, Y.-J.Baik^1, and K.-W.Chae^2 (^1Thin Film Technology Research Center, Korea Insitute of Science and Technology, Korea) (^2Precision Diamond Company, South Korea)
P1.01.10	Analysis of the interface between Unpolished Mo and Polycrystalline Diamond Films Jingqi Li, Qing Zhang, S.F.Yoon, .Ahn, Qiang, Zhou, Sigen Wang, Dajiang Yang and Qiang Wang (Microelectronic division, NanYang Technological University, Singapore)
P1.01.11	Manipulation of the equilibrium between diamond growth and renucleation to form a novel nanodiamond/amorphous carbon composite X.T.Zhou^1, Wuan Li^1, F.Y.Meng^1, I.Bello^1, C.S.Lee^1, S.T.Lee^1 and Y.Lifshitz^1, 2 (^1Center of Super-Diamond and Advanced Films: COSDAF & Dept of Physics and Materials Science, City University of Hong Kong, P.R.China) (^2On leave from Soreq NRC)
P1.01.12	High IR Transmittance diamond films synthesized using CH3 OH-H2 gas mixtures Man Wei-dong, Wang Jian-hua, Ma Zhi-bin, Wang Chuan-xin (Wuhan Institute of Chemical Technology, P.R.China)
P1.01.13	Microporous diamond films on zeolites by CVD method E.Titus, M.K.Singh, K.N.N.Unni, P.K.Tyagi and D.S.Misra (Department of Physics, Indian Institute of Technology, India)
P1.01.14	Hole states in boron-delta-doped diamond Miguel E.Mora-Ramos (Universidad Autonoma del Estado de Morelos, Mexico)
P1.01.15	Formation, atomic structures and structural optimization of tetrahedral carbon onion T.Oku and I.Narita (Institute of Scientific and Industrial Research, Osaka University, Japan)
P1.01.16	Microstructure control of diamond film using pulsed direct current biasing Jong-Kuek Park, Wook-Seong Lee and Young-Joon Baik (Thin Film Technology Research Center, Korea Institute of Science and Technology)
P1.01.17	Sulfur addition to CH4/CO2 diamond CVD gas mixtures: growth studies and gas phase investigations J.R.Petherbridge, P.W.May, E.Crichton, K.N Rosser and M.N.R. Ashfold (School of Chemistry, University of Bristol)
P1.01.18	Simulation of H-C-S containing diamond CVD gas mixtures J.R.Petherbridge, P.W.May, D.E.Schallcross, G.M.Fuge, K.N Rosser and M.N.R. Ashfold (School of Chemistry, University of Bristol)
P1.01.19	Characterization of impurities doped diamond films by new bias method D.Saito, T.Kimura and S.Yugo (University of Electro-Communications, Japan)
P1.01.20	Highly effective carbon fibered adsorbents N.Savchenko, M.Guseva, V.Babaev, V.Khvostov, N.Novikov, A.Manakov (Department of Physics, Moscow State University, Russia)
P1.01.21	Growth of diamond on α-(0001) sapphire substrates K.G. Saw^1, I. Andrienko^1, A. Cimmino^1, P. Spizzirri^1, S. Prawer^1 and J. du Plessis^2 (^1 School of Physics, University of Melbourne, Australia) (^2 Department of Applied Physics, RMIT, Australia)
P1.01.22	Roughness control of polycrystalline diamond films grown by bias-enhanced microwave plasma-assisted CVD Soo-Hyung Seo^1, Tae-Hoon Lee^2,and Jin-Seok Park^2 (^1 Center for Electronic Materials and Components (EM&C), Hanyang University, Korea) (^2 Department of Electrical Engineering, Hanyang University, Korea)
P1.01.23	Nucleation by activated diamond CVD B.V.Spitsyn (Institute of Physical Chemistry, RAS, Russia)
P1.01.24	Diamond film deposition on synthetic diamond crystals using the glow discharge V.K. Pashnev^1, V.E. Strel’nitskij^1, O.A.Opalev^1, V.I.Gritsina^1, I.I. Vyrovets^1, Y.A. Bizjukov^1, A.I.Lolupaeva^2, T.A. Nachalnaya^3, G.G.Podzyarev^3 and S.A.Ivahknenko^3 (^1 NSC Kharkov Institute of Physics and Technology, Ukraine) (^2 Kharkov State Polytechnical University, Ukraine) (^3 Institute for Superhard Materials, Ukraine)
P1.01.25	Characteristics of an abnormal DC glow discharge for diamond synthesis H. Yoshikawa^1, Sung-Pill Hong^1, Y.Koga^2, and A.Nishiyama^3 (^1 Japan Fine Ceramics Center: JFCC, Japan) (^2 National Institute of Advanced Industrial Science and Technology: AIST, Japan) (^3 Mistubishi Materials Corporation, Japan)
P1.01.26	Characterization of Boron doped Diamond Thin Film Grown on Porous Silicon Tai-Fa Young^1, Chuan-Leung Hwang^2, and Poh-Chan Su^1 (^1 Department of Physics, National Sun Yat-sen University, Taiwan) (^2 Department of Chemistry, National Sun Yat-sen University, Taiwan)
P1.01.27	Diamond growth on Ir/CaF2/Si substrates Jun Qi^1, C.H.Lee^1, L.S.Hung^1. W.J.Zhang^1, Y.Lifshitz^1, 2, and S.T.Lee^1 (^1Center of Super-Diamond and Advanced Films: COSDAF & Dept of Physics and Materials Science, City University of Hong Kong, P.R.China) (^2On leave from Soreq NRC)
P1.01.28	Development of machining techniques of diamond coated bearings Y.Seki, K.Meguro, A.Namba, K.Ishibashi and T.Imai (FCT Project/JFCC, c/o Sumitomo Electric Industries, LTD., 1-1-1 Koya-kita, Itami, Hyogo, 664-0016 Japan)

Session P1.02: Field and Electron Emission

P1.02.1	Thermally agitated Field emission by Amorphous Diamond Ming-Chi Kan^1, Jow-Lay Huang^1, and James C.Sung^2 (^1National Cheng Kung University, Taiwan, ROC) (^2Kinik Company and National Taipei University of Technology, ROC)
P1.02.2	Nano-tip emission of amorphous diamond Ming-Chi Kan^1, Jow-Lay Huang^1, James C.Sung^2, Ding-Fwu Lii^3 and Kue-Hsien Chen^4. (^1National Cheng Kung University, Taiwan, ROC) (^2Kinik Company and National Taipei University of Technology, ROC) (^3Department of Electrical Engineering, Chinese Naval Academy, Taiwan) (^4Institute of Atomic and Molecular Sciences, Academia Sinica, Taiwan)
P1.02.3	BN and SiO2 can replace diamond in nanostructured carbon low-field emitters A.V.Karabutov^1, V.G.Ralchenko^1, I.I.Vlasov^1, S.B.Korchagina^2 and S.K. Gordeev^2 (^1General Physics Institute, Russia) (^2Central Research Institute of Materials, Russia)
P1.02.4	Low-field electron emission of self organized micro-tip arrays with incorporated nanotubes produced by laser beam evaporation A.V.Karabutov, A.V.Simakin and G.A. Shafeev (General Physics Institute of RAS, Russia)
P1.02.5	Can oxidation improve field electron emission of diamond nanomaterials A.V.Karabutov^1, S.K. Gordeev^2, V.G.Ralchenko^1, and S.B.Korchagina^2 (^1General Physics Institute, Russia) (^2Central Research Institute of Materials, Russia)
P1.02.6	Emission Properties of Carbon Nanotubes field Emitter Bean-Jon Li, Hsing Chen, Teng-Fang Kuo, Hong-Jen Lai (Materials Research Laboratories, Industrial Technology Research Institute, Taiwan, ROC)
P1.02.7	The vertical growth of multi-walled carbon nanotubes by bias-assisted ICPHFCVD and their field emission properties H.J.Ryu^1, K.S.Kim^1 and G.E.Jang^2 (^1Advanced Materials Division, Korea Research Institute of Chemical Technology, Korea) (^2Department of Materials Science and Engineering, Chungbuk National University, Korea)
P1.02.8	Microwave Plasma CVD of diamond and nanodiamond coatings in vapor mixtures of methanol and ethanol and applications to cold cathodes Y.Tzeng, C.Liu and Y.Chen (Department of Electrical and Computer Engineering, Auburn University, USA)
P1.02.9	High current-density carbon-nanotube cold cathodes and applications to non-contact electrical couplers and switches Y.Tzeng, C.Liu and Y.Chen (Department of Electrical and Computer Engineering, Auburn University, USA)
P1.02.10	Comparison of electron field emission characteristics of carbon nanotubes and nano-diamond films S.G.Wang^1, Q.Zhang^1, S.F.Yoon^1, J.Ahn^1, F.X.Lu^2, D.J.Yang^1, Q.Wang^1, Q.Zhou^1 and J.Q.Li^1 (^1Microelectronics Centre, Nanyang Technological University, Singapore) (^2School of Materials Science and Engineering, University of Science and Technology, Beijing, PR China)
P1.02.11	Field emission from Carbon Films Deposited on Steel Substrate Akira Yamamoto, Takahiro Tsutsumoto (Western Industrial Research Institute of Hiroshima Prefecture, Japan)
P1.02.12	The Electron field emission of CNx films grown by rf magnetron sputtering J.J.Li, W.T.Zheng, H.T.Bian, and Z.S.Jin (Department of Materials Science and National Laboratory of Superhard Materials, Jilin University, PR China)
P1.02.13	Simulation on I-V characteristics of carbon nanotube's self-assembly system Zhou Ji-cheng, He Hong-bo, Li Yi-bing and Huang Bai-yun (State Key Laboratory for Powder Metallurgy, Central South University, PR China)

Session P1.03: Characterization

P1.03.1	Acoustic emission detection of macro-indentation cracking mechanisms of diamond coating on silicon M.Belmonte^1, A.J.S.Fernandes^2, F.M.Costa^2, F.J. Oliveira^1 and R.F.Silva^1 (^1Department of Ceramics and Glass Engineering, CICECO, University of Aveiro, Portugal) (^2Department of Physics, Univ. of Aveiro, Portugal)
P1.03.2	TL characterization of a CVD diamond wafer for ionising radiation dosimetry M.Benabdesselam^1, P.Iacconi^1, J.E.Butler^2 and C.Nigoul^1 (^1Laboratoire de Physique Electronique des Solides, Universite de Nice-Sophia Antipolis, France) (^2Naval Research Laboratory, Chemistry Division, USA)
P1.03.3	Nature of millimeter wave losses in low loss CVD diamonds B.M.Garin^1, V.V.Parshin^2, S.E.Myasnikova^2, and V.G.Ralchenko^3 (^1Institute of Radio Engineering and Electronics of Russian Academy of Sciences) (^2Institute of Applied Physics of Russian Academy of Sciences) (^3Natural Science Center of General Physics Institute of Russian Academy of Sciences)
P1.03.4	ESR and optical defects in as-grown and irradiated CVD diamond K.Iakoubovskii and A.Stesmans (Physics Department, K.U.Leuven, Belgium)
P1.03.5	Topographical study of split and shift of cathodoluminescence peaks of diamonds H.Kanda^1, K.Watanabe^1, Y.Y Eun^2, and B.J.K.Lee^2 (^1National Institute for Materials Science, Japan) (^2Korea Institute of Science and Technology, Korea)
P1.03.7	Oxidation Behaviour of High Quality Freestanding Diamond Films F.X.Lu, J.M.Liu, W.Z.Tang, C.M.Li, J.H.Song, andY.M.Tong (School of Materials Science and Technology, University of Science and Technology Beijing, PR China)
P1.03.8	Stiffness Measurements of Diamond Fibre Reinforced Plastic Composites P.W.May^1, P.J.C.Wigg and D.Smith^2 (^1School of Chemistry, University of Bristol, UK) (^2Department of Mechanical Engineering, University of Bristol, UK)
P1.03.9	Surface and bulk states of disordered carbon and their optical properties N.N.Melnik^1, T.N.Zavaritskaya^1, V.A.Karavanski^2 (^1Lebedev Physical Institute, RAS, Russia) (^2Center of Natural-Science Research, Institute of General Physics, RAS, Russia)
P1.03.10	Influence of the growth conditions on the detection properties of CVD diamond films M.G.Donato, G.Faggio, M.Marinelli, G.Messina, E.Milani, A.Paoletti, S.Santangelo, A.Tucciarone and G.Verona Rinati (^1INFM – Dipartimento di Meccanica e Materiali, Universita di Reggio Calabria, Italy) (^2INFM – Dipartimento di Scienze e Tecnologie Fisiche ed Energetiche, Universita di Roma, Italy)
P1.03.11	Rectifying Behaviour of Heterostructures formed on Phosphorous-Doped Polycrystalline Diamond Thin Films Sattar Mirzakuchaki (Iran University of Science and Technology, Iran)
P1.03.12	Effect of Heavy Ion irradiation on self supported diamond sheets Umesh Palnitkar^1, V.S.Shirodkar^1, M.K.Singh^2, Elby Titus^2, D.S.Misra^2, P.Ayyub^3 and D.K. Avasthi^4 (^1Department of Physics, Institute of Science, India) (^2Department of Physics, Indian Institute of Technology, India) (^3Department of Condensed Matter Physics and Material Science, Tata Institute of Fundamental Research, India) (^4Nuclear Science Centre, India)
P1.03.13	The Optical properties of the neutral [001]-split interstitial (I001°) in diamond H.Smith^1, M.E.Newton^1, A.Mainwood^1, G.Davies^1 and T.R.Anthony^2 (^1Department of Physics, Kings College London, UK) (^2General Electric Company, USA)
P1.03.14	Charge -based deep level transient spectroscopy of undoped and nitrogen-doped ultrananocrystalline diamond films V.I.Polyakov^1, N.M.Rosssukanyi^1, A.I.Rukovishnikov^1, V.G.Pereverzev^2, S.M Pimenov^2, J.A.Carlisle^3, and D.M.Gruen^3 (^1Institute of Radio Eng. & Electronics, Russia) (^2General Physics Institute, Russia) (^3Material Science Division, Argonne National University, USA)
P1.03.15	Charge sensitive deep level transient spectroscopy of boron-doped and gamma irradiated mono- and polycrystalline diamond V.I.Polyakov^1, N.M.Rosssukanyi^1, A.I.Rukovishnikov^1, V.G.Pereverzev^2, S.M Pimenov^2, J.A.Carlisle^3, and D.M.Gruen^3 (^1Institute of Radio Eng. & Electronics, Russia) (^2General Physics Institute, Russia) (^3Material Science Division, Argonne National University, USA)
P1.03.16	Polarisation dependence of raman scattering in nanostructured carbon films M.C.Rossi (Electronic Engineering Dept, and INFM, University of Roma Tre, Italy)
P1.03.17	The application of microhardness method for measurement and attestation of hard coatings I.Sh. Trakhtenberg^1, A.B.Vladimirov^1, A.P.Rubstein^1, E.V.Kusmina^1 and K.Uemura^2 (^1Metal Physics Institute, RAS, Russia) (^2ITAC Ltd, Japan)
P1.03.18	Thermally stimulated current analysis of Ion Implanted Synthetic Diamond E.Trajkov and S.Prawer (Centre for Quantum Computing Technology, School of Physics, The University of Melbourne, Australia)
P1.03.19	Investigation on the mangnetoresistive effect of p-type semiconducting diamond films W.L.Wang, C.Z.Cai, K.J.Liao, C.Y.Kong, Y.Ma, and L.Fang (Department of Applied Physics, Chongqing University, PR China)

Session P1.04: Devices

P1.04.1	Bulk Photoconductivity of CVD diamond films for UV and XUV detection M.-C.Castex^1, E.Lefeuvre^1, J.Achard^2, C.Beuille and H. Schneider^4 (^1Laboratoire de Physique des Lasters, CNRS, Universite Parid-Nord, France) (^2Laboratoire d’Ingenierie des Materiaux et des Hautes Pressions, CNDR, Universite Parid-Nord, France) (^3ALSTOM Transport SA, France) (^4Laboratoire d’Electrotechnique et d’Electronique Industrielle, France)
P1.04.2	Deposition of DLC Films on polymeric materials for biomedical applications Y. Ohgoe^1, K.K.Hirakuri^1, K. Tsuchimoto^2, A.Honma^3, G. Griedbacher^4, E.Tatsumi^3, Y.Taenaka^3 and Y.Fukui^1 (^1Department of Electronic & Computer Engineering, Tokyo Denki University, Japan) (^2Aisin Cosmos R&D, Japan) (^3Department of Artificial Organs, National Cardiovascular Center Research Institute, Japan) (^4Institute of Analytical Chemistry, Vienna University of Technology, Vienna)
P1.04.3	Characteristics of GaN Metal-Oxide-Semiconductor Capacitor Using SiO2 Films Grown by photo Chemical Vapour Deposition Bohr-Ran Huang^1, Yu-Zung Chiou^2, Jung-Ran Chiou^1, Shoou-Jinn Chang^2, Yan-Kuin Su^2, Chia-Sheng Chang^2, and Yi-Chao Lin^2 (^1Institute of Electronics and Information Engineering, National Yunlin University of Science and Technology, Taiwan, R.O.C.) (^2Institute of Microelectronics and Department of Electrical Engineering, National Cheng Kung University, Taiwan, R.O.C.)
P1.04.4	Preparation of lithium niobate thin films on diamond-coated silicon substrate for surface acoustic wave devices M.Ishihara^1, T.Nakamura^1, F.Kokai^2 and Y.Koga^1, 2 (^1Research Center for Advanced Carbon Materials, National Institute of Advance Industrial Science and Technology, Japan) (^2Joint Research Consortium of Frontier Carbon Technology, JFCC, Japan)
P1.04.5	Deep sub-micron gate diamond MISFETs H.Matsudaira^1,2, T.Arima^1,2, H.Ishizaka^1,2, H.Umezawa^1,2, M.Tachiki^1,2, S.Miyamoto^1,2 and H.Kawarada^1,2 (^1School of Science and Engineering, Waseda University, Japan) (^2CREST, JST, Japan)
P1.04.6	2-D imaging arrays on CVD diamond A.De Sio^1, M.G.Donato^2, G.Faggio^2, M.Marinelli^3, G.Messina^2, E.Milani^3, E.Pace^1, A.Paoletti^3, S.Santangelo^2, S Scuderi^4, A.Tucciarone^3, and G.Verona-Rinati^3 (^1Dip. Astronomia e Scienze dello Spazio, Universita di Firenze, Italy) (^2Dip. Meccanica e Materiali, Universita di Reggio Calabria, Italy) (^3INFM, Dip. Scienze e Tecnologie Fisiche ed Energetiche, Italy) (^4Osservatorio Astrofisico di Catania, Italy)
P1.04.7	Spectral response of large area CVD diamond photoconductors for space applications in the deep UV A.De Sio^1, M.G.Donato^2, G.Faggio^2, M.Marinelli^3, G.Messina^2, E.Milani^3, E.Pace^1, A.Paoletti^3, S.Santangelo^2, S Scuderi^4, A.Tucciarone^3, and G.Verona-Rinati^3 (^1Dip. Astronomia e Scienza dello Spazio, Universita di Firenze, Italy) (^2Dip. Meccanica e Materiali, Universita di Reggio Calabria, Italy) (^3INFM, Dip. Scienze e Tecnologie Fisiche ed Energetiche, Italy) (^4Osservatorio Astrofisico di Catania, Italy)
P1.04.8	Study on ultraviolet emission from pn junction of hexeroepitaxial diamond films W.L.Wang, K.J.Liao, C.Z.Cai, C.G.Hu, Y.Ma, L.Fang (Department of Applied Physics, Chongqing University, PR China)
P1.04.9	Effects of CVD Diamond Coatings on the Performance of Cemented Carbide Cutting Tools Qiang Wang^1, Qing Zhang^1, F.X.Lu^2, W.Z.Tang^2, Sigen Wang^1, S.F.Yoon^1, J.Ahn^1, Qiang Zhou^1, Dajiang Yang^1, and Jingqi Li^1 (^1Microelectronics Center, Nanyang Technological University, Singapore) (^2School of Materials Science and Engineering, University of Science and Technology Beijing, PR China)

Session P05: Nanotubes: synthesis and characterization

P1.05.1	Catalyzed Growth Model of Carbon Nanotubes by Microwave Plasma Chemical Vapor Deposition Using CH4 and CO2 mixtures Mi Chen, Ching-Ming Chen and Chia-Fu Chen (Department of Materials Science and Engineering, National Chiao-Tung University, Taiwan, ROC)
P1.05.2	Vapour phase growth mechanism of carbon microcoils / nanocoils X.Chen^1, S.Yang^2, Ktakeuchi^2, S.Motojiima^2 and H.Iwanaga^3 (^1Faculty of Material Science and Engineering, Huauiao University, China) (^2Department of Applied Chemistry, Gifu University, Japan) (^3Department of Material Science, Nagasaki University, Japan)
P1.05.3	Studies of ion implantation method used for catalyst applications to synthesize carbon nanotubes by ECR-CVD Po Yuan Lo, Chao Hsun Lin, Jin Yu Wu and Cheng Tzu Kuo (Institute of Materials Science and Engineering, National Chiao Tung University, Taiwan)
P1.05.4	Growth of single crystal ZnO rods and wires using sputter deposition W.T.Chiou, W.Y.Wu, and J.M.Ting (National Cheng Kung University, Taiwan, ROC)
P1.05.5	Novel catalysts used for the synthesis of carbon nanotubes Zishan Husain Khan, Huen-Hou Liao, Ruo-Mei Liu and Jyh-Ming Ting (Department of Materials Science and Engineering, National Cheng Kung University, Taiwan)
P1.05.7	Carbon Nanotubes from Camphor - a Botanical Hydrocarbon Mukul Kumar, Xinluo Zhao and Yoshinori Ando (Department of Materials Science and Engineering, Meijo University, Japan)
P1.05.8	The role of nitrogen in nanotube formation Chao Hsun Lin^1, 2, Chih Ming Hsu^1, Hui Lin Chang^1, and Cheng Tzu Kuo^1 (^1Department of Materials Science and Engineering, National Chiao Tung University) (^2Photoetching Laboratory, Industrial Technology Research Institute, Taiwan)
P1.05.9	Possibilities of improving mechanical and electrical properties of Portland cement by addition of carbon nanotubes A.Madronero and J.I.Robla (CENIM, Spain)
P1.05.10	Observations of nanotube and 'celery' structures following diamond CVD on single crystal diamond substrates J.R.Petherbridge^1, M.Baines^2, P.W.May^1 and D.Cherns^2 (^1School of Chemistry, University of Bristol, UK) (^2H H Wills Physics Laboratory, Bristol, UK)
P1.05.11	Theoretical analysis on the diameter distributions of carbon nanotubes by CVD methods Y.B.Zhu, W.L.Wang, K.J.Liao, C.G.Hu, Y.Ma and C.Z.Cai (Department of Applied Physics, Chongqing University, PR China)
P1.05.12	Electrochemical properties of carbon-nanotubes W.L.Wang, K.J.Liao, C.G.Hu, Y.Ma, C.Z. Cai and W.Zhu (Department of Applied Physics, Chongqing University, PR China)

Tuesday 23 July 2002

08:30 – 09:00

Registration in the Foyer of the Architecture Building

Session 4: Characterization

Chair:

A.Collins (King’s College London, UK)

9:00	4.1	Invited Presentation: “Investigation of heteroepitaxial CVD diamond by TEM and by photoluminescence microscopy” J.W.Steeds^1, A.E. Mora^1, S.J. Charles^1, A.Wotherspoon^1, and J.E.Butler^2 (^1University of Bristol, UK) (^2Naval Research Laboratory, USA)
9:30	4.2	Invited Presentation: “EPR Studies of Paramagnetic defects incorporating hydrogen in CVD diamond” M.E.Newton and C.Glover (Department of Physics, King’s College London, UK)
10:00	4.3	Ion beam Induced Charge Microscopy: A new tool for the characterisation of diamond and other wide band gap semiconductor devices D.N.Jamieson, S.M.Hearne, E.Trajkov, C.Yang. B.Rout, and S.Prawer, D.N.Jamieson, A.Fowler (Microanalaytical Research Centre and School of Physics, The University of Melbourne)
10:20	4.4	Analysis of traps in high quality CVD diamond films through the temperature dependence of carrier dynamics M.Marinelli^1, E.Milani^1, A.Paoletti^1, A.Tucciarone^1, G.Verona-Rinati^1, M.Angelone^2, M.Pillon^2 (^1INFM, Università di Roma, Italy) (^2Associazione EURATOM-ENEA sulla Fusion, Italy)
10:40		P1.03.18 - Thermally stimulated current analysis of Ion Implanted Synthetic Diamond E.Trajkov and S.Prawer

11:00-11:30

COFFEE BREAK & POSTER VIEWING

Session 5: Nanotubes: Synthesis and Applications

Chair:

B.F.Coll (Motorola, Inc., USA)

11:30	5.1	Invited Presentation: “Growth and Applications of Aligned Multiwall Carbon Nanotubes.” W.I.Milne, K.B.K Teo, M.Chhowalla (Cambridge University, UK)
12:00	5.2	Magnetic carbon nanofoam A.V.Rode^1, E.GGamaly^1, A.G Christy^1, S.T.Hyde^1, R.G.Elliman^1, B.Luther-Davis^1, A.I.Veinger^2, J.Giapintzakis^3, J.Androulakis^3, and C.Fotakis^3 (^1Australian National University, Australia) (^2Ioffee Physical-Technical Institute, Russia) (^3Institute of Electronic Structure and Laser, Heraklion, Greece)
12:20	5.3	Properties and applications of carbon nanotube coated electrodes as electrical contacts and couplers Y.Tzeng, C.Liu and Y.Chen (Auburn University, USA)
12:40	5.4	Carbon Nanotubes Growth By CVD on Graphite Fibers S.Zhu^1, C-H.Su^2, J.C.Cochrane^1, S.L.Lehoczky^2, I.Muntele^3, and D.Ila^3 (^1USRA, NASA/Marshall Space Flight Center, USA) (^2Microgravity Science and Applications Department, NASA/Marshall Space Flight Center, USA) (^3Center for Irradiation of Materials, Alabama A&M University, USA)

13:00-14:15

LUNCH

Session 6: Devices

Chair:

H.Karawada (Waseda University, Japan)

14:15	6.1	Invited Presentation: “Miniature X-ray Sources with Diamond Electrodes” C.Ribbing and K.Hjort (Uppsala University, Sweden)
14:45	6.2	Nanocrystalline Diamond MEMS/Resonators J.E. Butler^1, D. S.Y. Hsu^1, B.H. Houston^2, X. Liu^2, J. Vignola^2, T. Feygelson^3, J.Wang^4, and C.T.-C. Nyguen^4 (^1Code 6174, Naval Research Laboratory, Washington DC 20375 USA) ^(2Code 7136, Naval Research Laboratory, Washington DC 20375 USA) ^(3GeoCenters Inc., Fort Washington MD 20639 USA) ^(4Center for Integrated Wireless Microsystems (WIMS), Dept. of EECS, University of Michigan, Ann Arbor, Michigan 48109 USA)
15:05	6.3	Al Schottky contacts and oxidised lines as gates in H-terminated diamond in-plane transistors J.A.Garrido^1, B.Rezek^1, C.E.Nebel^1, M.Stutzmann^1, G.Rosel^1, R.Todt^1, M.-C Amann^1, E.Snidero^2, and P.Bergonzo^2 (^1Walter Schottky Institut, Technische Universität, München, Germany) (^2LIST: CEA-RechercheTechnology / DIMIR / SIAR / Saclay, France)
15:25	6.4	Cryogenic operation of surface channel diamond field-effect transistors H.Ishizaka^1,2, H.Umezawa^1,2, M.Tachiki^1,2and H.Kawarada^1,2 (^1School of Science and Engineering, Waseda University, Japan) (^2CREST, JST, Japan)

15:45-16:10

COFFEE BREAK & POSTER VIEWING

Session 7: Nitrides

Chair:

S.P.Lau (Nanyang Technological University, Singapore)

16:10	7.1	Invited Presentation: “AlN/Diamond heterostructures for LED applications” C.Nebel, C. Miskys, J.Garrido, M.Hermann, O.Ambacher, M.Eickhoff, M.Stutzmann (Walter Schottky Institut, Technische Universität München, Germany)
16:40	7.2	Fundamental role of ion bombardment for the synthesis of cubic boron nitride films H.Hofsäss, H.Felmermann, S.Eyhusen, and C.Ronning (University Gottingen, Germany)
17:00	7.3	Preparation of Low Stress Cubic Boron Nitride Film using Magnetron Sputtering I.Bello, M.K.Chan, Y.C.Chan, Q.Li, W.J.Zhang, S.T.Lee, Y.Lifshitz (City University of Hong Kong, China)
17:20	7.4	Well-crystallized solid solutions between carbon and boron nitride M.Wakatsuki, Y.Kakudate, K.Yamamoto, H.Yokoi, S.Usuba and S.Fujiwara (National Institute of Advanced Industrial Science and Technology: AIST, Japan)
17:40	7.5	Fluorine Chemistry Applied to Form Thick (>1μm) cBN Films by ECR C.Y.Chan, W.J.Zhang, X.M.Meng, K.M Chan, Y.Lifshitz. S.T.Lee and I.Bello (City University of Hong Kong, China)

18:00

END OF DAY: FREE EVENING

Wednesday 24 July 2002

08:00 – 08:30

Registration in the Foyer of the Architecture Building

Session 8: Nanodiamond

Chair:

D.M.Gruen (Argonne National Laboratory, USA)

8:30	8.1	Invited Presentation: “Nitrogen-doped ultrananocrystalline diamond” J.A.Carlisle, J.Birrell, J.E.Gerbi, O.Auciello, J.M.Gibson and D.M.Gruen (Argonne National Laboratory, USA)
9:00	8.2	The Characterization and Electrochemical Responsiveness of Boron-Doped Nanocrystalline Diamond Thin-Film Electrodes Y.Show, M.Witek, P.Sonthalia and G.M.Swain (Michigan State University, USA)
9:20	8.3	Possible Mechanism for Nanocrystalline Diamond Formation in Fused Silica I.Andrienko, D.N.Jamieson, J.L.Peng, J.C.McCallum, P.G.Spizzirri, and S.Prawer (School of Physics, University of Melbourne)
9:40	8.4	Growth and size dependant Properties of Nano-crystalline Diamond Films L.C.Chen^1, K.H.Chen^2, J.J.Wu^3 and W.F.Pong^4 (^1Center for Condensed Matter Sciences, National Taiwan University, Taiwan) (^2Institute of Atomic and Molecular Sciences, Academia Sinica, Taiwan) (^3Department of Chemical Engineering, National Taiwan University, Taiwan) (^4Tamkang University, Taiwan)
10:00	8.5	Substrate Pretreatment Needed for Nucleation of Nanocrystalline Diamond Films S.T.Lee, Y.Lifshitz (City University of Hong Kong, China)

10:20-10:50

COFFEE BREAK & POSTER VIEWING

Session 9: Computing in Diamond

Chair:

D.N.Jamieson (The University of Melbourne, Australia)

10:50	9.1	Quantum Computing: What’s all the fuss about? S.Prawer, D.N.Jamieson and A.Fowler (Special Research Centre for Quantum Computer Technology, School of Physics, The University of Melbourne, Australia)
11:20	9.2	Invited Presentation: “Defect centres in diamond for quantum computing” N.B.Manson, M.J.Sellars (Australian National University, Australia)

Session 10: Modelling of Nanotubes

Chair:

N.Marks (The University of Sydney, Australia)

11:50	10.1	Kinetics of nanotube growth mediated by surface diffusion O.A. Louchev (Advanced Materials Laboratory, National Institute for Materials Science, Japan)
12:10	10.2	Positional uncertainty of nanoscale diamond rods under thermal load: a molecular dynamics study ^1G.Leach, ^2S.Russo and ^3S.Prawer (^1School of Computer Science, RMIT, Australia) (^2Department of Applied Physics, RMIT, Australia) (^3School of Physics, The University of Melbourne, Australia)
12:30	10.3	I-V characteristics and tunneling effect of carbon nanotubes: a theoretical study R.Q.Zhang, Y.Q Feng, K.S Chan, H.F.Cheung and S.T.Lee (City University of Hong Kong, China)

13:00

DEPARTURE FOR CONFERENCE TOUR TO PHILIP ISLAND

Thursday 25 July 2002

08:00 – 08:30

Registration in the Foyer of the Architecture Building

Session 11: Electrochemistry

Chair:

J.A.Carlisle (Argonne National Laboratory, USA)

8:30	11.1	Invited Presentation: “Conducting Diamond Thin-Films in Electrochemistry” G.M.Swain (Michigan State University, USA)
9:00	11.2	Fabrication and Application of DiaChem electrodes M.Fryda^1, TH.Matthee^1, S. Mulcahy^1, A.Hampel^2, l.Schaffer^2, I.Troster^2 (^1CONDIAS GmbH, Germany) (^2Fraunhofer, Germany)
9:20	11.3	The interaction of oxidized boron-doped diamond electrode surfaces with solution-phase analytes D.A.Tryk^1,2,3, H.Tachibana^1, S.Funyu^1, H.Inoue^1,2, T.Fukazawa^3, H.Notsu^3, E.Popa^3, T.Kondo^3, A.Fujishima^3 (^1Tokyo Metropolitan University, Japan) (^2CREST, Japan Science and Technology, Japan) (^3University of Tokyo, Japan)
9:40	11.4	Electrochemical Properties of CVD Diamond Films Vacuum-Annealed at 1500-1640 C Yu.V.Pleskov^1, M.D.Krotova^1, V.G.Ralchenko^2, A.V.Khomich^3, and R.A.Khmelnitskiy^4 (^1Frumkin Institute of Electrochemistry, Russia) (^2General Physics Institute, Russia) (^3Institute of Radio Engineering and Electronics, Russia) (^4Lebedev Physical Institute, Russia)

10:00-10:30

COFFEE BREAK & POSTER VIEWING

Session 12: Diamond Surfaces

Chair:

C.Nebel (Walter Schottky Institut, Technische Universität, München, Germany)

10:30	12.1	Invited Presentation: “Hydrogen on Diamond: a Key Issue for Surface Electronic Properties.” J.Ristein (University of Erlangen, Germany)
11:00	12.2	Invited Presentation: “Field electron emission microscopy of diamond and related materials” A.V.Karabutov^1, V.D.Frolov^1, V.I.Konov^1, S.M.Pimenov^1, V.Ralchenko^1 and K.Gordeev^2 (^1General Physics Institute, Russia) (^2Central Research Institute of Materials, Russia)
11:30	12.3	At Distance Interaction of Suprathermal Highly Charged Ions Above Diamond Surfaces J.P.Briand^1, M.Benhachoum^1, A.Gicquel^2 and J.Achard^2 (^1ERIS, Universite P.&M.Curie, France) (^2LIMHP, Universite Paris Nord, France)
11:50	12.4	Structure and properties of high temperature annealed CVD diamond V.Ralchenko^1, L.Nistor^2, E.Pleuler^3, A.Khomich^4 and R.Khmelnitskii^5 (^1General Physics Institute, Russia) (^2National Institute for Applied Materials Physics, Romania) (^3Fraunhofer Institute of Applied Solid State Physics, Germany) (^4Institute of Radio Engineering and Electronics, Russia) (^5P.N.Lebedev Physical Institute, Russia)

12:10-13:40

LUNCH

Session 13: Hetero-Epitaxy

Chair:

J.W.Steeds (University of Bristol, UK)

13:40	13.1	Flat Epitaxial Diamond/Ir(001) interface visualized by High Resolution Transmission Electron Microscopy F.Hormann^1, H.Y.Peng^2, Th.Bauer^1, Q.Li^2, M.Schreck. Y.Lifshitz^2, 3, S.T.Lee^2, B.Stritzker^1 (^1 Universität Augsburg, Germany (^2COSDAF, City University of Hong Kong, P.R.China) (^3On leave from Soreq NRC, Israel)
14:00	13.2	Surface orientation effect of diamond growth on platinum substrate H.Yamamoto, Y.Naoi, S.Shinjo, K.Noami, N.Kubota, T.Inaoka and Y.Shintani

14:20-14:40

COFFEE BREAK

14:40-16:10

POSTER PREVIEW SESSION II

Authors who have agreed to participate will make a short, maximum 3 minute, one overhead transparency, oral presentation that serves to 'advertise' the main point of the poster.

P2.01.3	H.Hofsäss	Lattice Location studies of rare earth impurities in 3C- 4H- and 6H-SiC
P2.01.4	T.Katsuno	Properties of amorphous carbon nitride a-CNx films prepared by the layer-by-layer method
P2.01.9	Ichihito Narita	Atomic structure of BN nanotubes studied by multi-slice method and molecular orbital calculations
P2.01.10	Ichihito Narita	Synthesis of boron nitride nanotubes by arc-melting of NbB2 powder
P2.01.11	Takeo Oku	Formation and structures of multiply-twinned nanoparticles with fivefold symmetry in chemical vapor deposited boron nitride
P2.01.12	Yukihiro Sakamoto	Preparation of Carbon Nitride using microwave plasma CVD
P2.01.16	Jun Xu	Visible electroluminescence of hydyogenated amorphous silicon carbide prepared by using organic carbon source
P2.01.17	R.Yakimova	Preparation and characterisation of well ordered graphite films on silicon carbide surfaces
P2.02.1	A.S.Barnard	Ab initio modelling of stability of nanocrystalline diamond morphologies
P2.02.5	Jun Xu	An Approach to Prepare Nanocrystalline Diamond from Amorphous Silicon carbide Films by KrF Excimer Laser Irradiation
P2.03.4	P.Shankar	Pitting Corrosion behaviour of HFCVD diamond coated tool steel specimens
P2.03.6	K.S.Song	Ozone Treated Channel Diamond FETs
P2.04.1	K.Bharuth-Ram	The metallic inclusions in synthetic diamond grits investigated by Mössbauer spectroscopy and electron microprobe analysis
P2.04.2	A.Bobrov	Sulfide medium of diamond crystallization: experimental and natural aspects
P2.04.8	K.Nakazawa,	Nonlinear increase of excitonic emission in synthetic type IIa diamond
P2.04.10	I.C.Popescu	High pressure apparatus for diamond synthesis: An analysis of Factors Affecting the hard tools endurance
P2.04.12	E.Trajkov	NV Centre Distributions in HPHT Diamond
P2.05.1	V.Amornkitbamrung	Surface and quality modification of diamond-like carbon films by CO2 laser heating assisted hot filament chemical vapour deposition
P2.05.3	G.Cicala	Morphological and structural study of plasma deposited fluorocarbon films at different thickness
P2.05.5	D.Sheeja	A comparative study between pure and aluminium containing amorphous carbon films using FCVA with high substrate pulse biasing
P2.05.6	F.L.Freire Jr	Hard Amorphous carbon-fluorine films deposited bt PECVD using C2H2-CF4 ags mixtures as percursor atmospheres
P2.05.8	H. Hofsäss	Diffusion of self and foreign atoms in tetrahedral amorphous carbon (ta-C)
P2.05.15	T.Sharda	New applications for highly stressed carbon films on silicon substrate
P2.05.19	A.Tamanyan	Nanocrystalline diamond films deposited by high repetition rate pulsed laser deposition (PLD) technique
P2.05.22	I.Sh.Trakhtenberg	Morphology of DLC surface and its change at ion bombardment

16:10-18:00

POSTER SESSION II

Session P2.01: Nitrides and Carbides

P2.01.1	Carbon nitride polycrystalline powder prepared by solvothermal method Chunbao Cao, Qiang Lu, and Hesun Zhu (Research Center of Materials Science, Beijing Institute of Technology, PR China)
P2.01.2	Investigations of GaN films grown at low temperature for electronic applications Z.Hassan^1, Z.Jamal^1, M.J.Abdullah^1, K.Ibrahim^1, M.E.Kordesch^2, W.Halverson^3, and P.C.Colter^3 (^1School of Physics, Universiti Sains Malaysia, Malaysia) (^2Department of Physics and Astronomy, Ohio University, USA) (^3Spire Corporation, USA)
P2.01.3	Lattice Location studies of rare earth impurities in 3C- 4H- and 6H-SiC U.Vetter^1, H. Hofsäss^1, M.Kietrich^2 and ISOLDE Collaboration^2 (^12^nd Physical Institute, University Gottingen, Germany) (^2CERN, Switzerland)
P2.01.4	Properties of amorphous carbon nitride a-CNx films prepared by the layer-by-layer method T.Katsuno and S.Nitta (Department of Electrical Engineering, Gifu University, Japan)
P2.01.5	Structure and mechanical properties of boron carbide coatings formed by electromagnetically accelerated plasma spraying J.Kitamura^1, S.Usuba^2, Y.Kakudate^2, H.Yokoi^2, K.Yamamoto^2, A.Tanaka^2 and S.Fujiwara^2 (^1Joint Research Consortium of Frontier Carbon Technology, JFCC, Japan) (^2 National Institute of Advanced Industrial Science and Technology: AIST, Japan)
P2.01.6	Steady-state and transient room-temperature photoluminescence of AIN films, prepared by RF magnetron sputtering V.Ligatchev, T.K.S.Wong, S.F.Yoon, J.Ahn, Rusli (School of Electronic Engineering, Nanyang Technological University, Singapore)
P2.01.7	Growth of cBN films by DC-bias assisted RF induction thermal plasma chemical vapor deposition J.Yu and S.Matsumoto (Advanced Materials Laboratory, National Institute for Materials Science, Japan)
P2.01.8	Synthesis of heterofullerene using a direct BN substitution reaction of fullerene T.Nakamura^1, K.Ishikawa^1, A.Goto^2, M.Ishihara^1, T.Ohana^1 and Y.Koga^1 (^1National Institute of Advanced Industrial Science and Technology, Japan) (^2Joint Research Consortium of Frontier Carbon Technology, Japan Fine Ceramics Center, Japan)
P2.01.9	Atomic structure of BN nanotubes studied by multi-slice method and molecular orbital calculations Ichihito Narita and Takeo Oku (Institute of Scientific and Industrial Research, Osaka University, Japan)
P2.01.10	Synthesis of boron nitride nanotubes by arc-melting of NbB2 powder Ichihito Narita and Takeo Oku (Institute of Scientific and Industrial Research, Osaka University, Japan)
P2.01.11	Formation and structures of multiply-twinned nanoparticles with fivefold symmetry in chemical vapor deposited boron nitride Takeo Oku^1, Kenji Hiratga^2, Toshitsugu Matsuda^3 and Toshio Hirai^4 (^1Institute of Scientific and Industrial Research, Osaka University, Japan) (^2Institute for Materials Research, Tohoku University, Japan) (^3JMC New Materials Inc., Japan) (^4Tokyo University of Science, Japan)
P2.01.12	Preparation of Carbon Nitride using microwave plasma CVD Yukihiro Sakamoto and Matsufumi Takaya (Department of Precision Engineering, Chiba Institute of Technology)
P2.01.13	Helium effusion measurements for studying the microstructure of a -SiC:H films deposited by dc sputtering (R.Saleh^1, L.Munisa^1 and W.Beyer^2) (^1Jurusan Fisika, Universitas Indonesia, Indonesia) (^2Institut fur Photovoltaik, Germany)
P2.01.14	The experimental research of regularities an irreversible phase transformation rBN to cBN at pressure 5.6GPa and room temperature L.K.Shevdov^1, N.V.Novikov^1, Valery L. Levitas^2, and I.A. Petrusha^1 (^1Institute for Superhard Materials of the National Academy of Sciences of Ukraine, Ukraine) (^2Department of Mechanical Engineering, Texas Tech University, USA)
P2.01.15	Comparison of SiC sublimation epitaxial growth in graphite and TaC coated crucibles M.Syväjärvi, R.Yakimova, R.R.Ciechonski and E.Janzen (Department of Physics and Measurement Technology, Linköping University, Sweden)
P2.01.16	Visible electroluminescence of hydyogenated amorphous silicon carbide prepared by using organic carbon source Xiaohui Huang, Tianfu Ma, Jun Xu, Wei Li, Jiafang Du and Kunji Chen (National Laboratory of Solid State Microstructures and Department of Physics, Nanjing University, PR China)
P2.01.17	Preparation and characterisation of well ordered graphite films on silicon carbide surfaces R.Yakimova^1, M. Syväjärvi^1, T.Iakimov^1, T.Balasubramanian^2, T.Kihlgren^3, L.Wallden^3 and E.Janzen^1 (^1Department of Physics and Measurement Technology, Linköping University, Sweden) (^2MAX-lab, Lund University, Sweden) (^3Solid State Physics, Chalmers University, Sweden)
P2.01.18	The mechanism of cBN growth using fluorine chemistry deduced from optical emission spectroscopy (OES) of the growth species and complimentary characterizations W.J.Zhang, C.Y.Chan, X.M.Meng, I.Bello, Y.Lifshitz and S.T.Lee (Center of Super-Diamond and Advanced Films: COSDAF & Dept of Physics and Materials Science, City University of Hong Kong, P.R.China)
P2.01.19	Raman and X-ray photoelectron spectroscopy study of CNx films synthesized by nitrogen ion implantation into diamond and graphite W.T.Zheng^1,3, P.J.Cao^1,2, J.J.Li^1, C.Dong^3 and Z.S.Jin^1 (^1Department of Materials Science and National Laboratory of Superhard Materials, Jilin University, PR China) (^2Beijing Laboratory of Vacuum Physics, Institute of Physics & Center for Condensed Matter Physics, Chinese Academy of Science, PR China) (^3National Key Laboratory of Materials Surface Modification by Laser, Ion and Electron, University of Technology, PR China)

Session P2.02: Nanodiamond

P2.02.1	Ab initio modelling of stability of nanocrystalline diamond morphologies A.S.Barnard, S.P.Russo and I.K.Snook (Department of Applied Physics, RMIT, Australia)
P2.02.2	Nanocrystalline Diamond Materials Properties J.E.Butler^1, T.Feygelson^2, B.Pate^3, K.H.Chen^4, S.Chattopadhyay^5, L.C.Dhen^5, J.Philip^6 and P.Hess^6 (^1Naval Research Laboratory, USA Institute of Physical Chemistry, USA) (^2GeoCenters Inc, USA) (^3Dept of Physics, Washington State University, USA) (^4Institute for Atomic and Molecular Science, Academia Sinica, Taiwan) (^5Center for Condensed Matter Sciences, National Taiwan University, Taiwan) (^6University of Heidelberg, Germany)
P2.02.3	Growth of hard and flat nanostructure diamond on Si substrate by microwave plasma chemical vapour deposition with biased enhanced nucleation Y.Hayashi, Y.Matsushita, S.Suzuki, T.Soga and T.Jimbo (Department of Environmental Technology and Urban Planning, Nahoya Institute of Technology, Japan)
P2.02.4	Structural analysis on nanocrystalline diamond by electron energy loss spectroscopy K.Okada, K Kimoto, S.Komatsu and S.Matsumoto (Advanced Materials Laboratory, National Institute for Materials Science, Japan)
P2.02.5	An Approach to Prepare Nanocrystalline Diamond from Amorphous Silicon carbide Films by KrF Excimer Laser Irradiation Jun Xu^1,2, Li Wang^1, Wei Li^1, Zhifeng Li^2, Tianfu Ma^1 and Kunji Chen^1 (^1National Laboratory of Solid State Microstructures and Department of Physics, Nanjing University, PR China) (^2National Laboratory of Infrared Physics, Chinese Academy of Science, PR China)
P2.02.6	Investigation of kinetic features of detonation synthesis ultradispersed diamonds by infrared and ultraviolet spectroscopy E.V.Mironov^1, A.Ya. Koretz^1 and E.A. Petrov^2 (^1Krasnoyarsk state technical university, Russia) (^2Federal Research Production Center “Altay”, Russia)

Session P2.03: Surfaces

P2.03.1	Surface Chemistry of Nanodispersed Diamonds G.Bogatyreva, M.Marinich and E.Ishchenko (Institute for Superhard Materials of the National Academy of Sciences of Ukraine, Ukraine)
P2.03.2	Local Nanometric Graphitization of CVD Diamond by highly charged ions J.P.Briand^1, N.Bechu^1, A.Gicquel^2, J.Achard^2, .Z.Xie^3 and G.Machicoane^3 (^1ERIS, Universite P.&M.Curie, France) (^2KIMHP, University Paris Nord, France) (^3Berkeley Ion Equipment Inc, USA)
P2.03.3	Interfacial Segregation of Ti-Al Phases in the Brazing of Diamond Grits with a Cu-Al-Ti Active Filler Metal Cheng Liang^1,2, and Sun-Tian Lin^2 (^1Department of Materials and Mineral Resources Engineering, National Taipei University of Technology, Taiwan) (^2Department of Mechanical Engineering, National Taiwan University of Science and Technology, Taiwan)
P2.03.4	Pitting Corrosion behaviour of HFCVD diamond coated tool steel specimens J.G.Buijnsters^1, R.V.Subba Rao^2, P.Shankar^1, W.J.P. van Enckevort^1, J.J.Schermer^1, A.Gebert^2 and J.J. ter Meulen^1 (^1Research Institute for Materials, University of Nijmegen, The Netherlands) (^2IWF Dresden, Institute for Metallic Materials, Germany)
P2.03.5	Modification of diamond surface by compounds of boron and phosphorus E.P.Smirnov (The State Institute of Technology, St Petersburg, Russia)
P2.03.6	Ozone Treated Channel Diamond FETs K.S.Song^1,2, T.Sakai^1,2, H.Kanazawa^1,2, Y.Araki^1,2, H.Umezawa^1,2, M.Tachiki^1,2 and H.Kawarada^1,2 (^1School of Science and Engineering, Waseda University, Japan) (^2CREST, JST, Japan)

Session P2.04: Natural single crystal, high pressure and shock synthesis diamond

P2.04.1	The metallic includions in synthetic diamond grits investigated by Mössbauer spectroscopy and electron microprobe analysis V.L.Mbele, K.Bharuth-Ram and D.Naidoo (Physics Department, University of Durban-Westville, South Africa)
P2.04.2	Sulfide medium of diamond crystallization: experimental and natural aspects A.Bobrov^1, Yu.Litvin^2, and V.Butvina^1 (^1Department of Petrology, Moscow State University, Russia) (^2Institute of Experimental Mineralology, Russian Academy of Sciences, Russia)
P2.04.3	Analysis of HT Treated diamonds John G. Chapman (Gemstyle Ltd, Western Australia, Australia)
P2.04.4	Formation of Impurity Consistencies of Diamond single crystals in growing processes N.V.Novikov, S.A.Ivakhnenko, O.A.Zanevskiy, and T.A.Nachalnaya (Institute for Superhard Materials of the National Academy of Sciences of Ukraine, Ukraine)
P2.04.6	Characteristics of Nakyn Kimberlite Field Diamonds according to spectroscopy data S.I.Mityukhin and V.P.Mironov (ALROSA Co Ltd, Russia)
P2.04.7	The properties of Semiconducting diamonds Grown by Temperature Gradient Method N.V.Novikov, T.A.Nachalnaya, V.G. Malogolovets, G.A.Podzyarey, L.A. Romanko, S.A.Ivahknenko and O.A.Zanevskiy (V.Bakul Institute for Superhard Materials of the National Academy of Science of Ukraine, Ukraine)
P2.04.8	Nonlinear increase of excitonic emission in synthetic type IIa diamond K.Nakazawa, H.Umezawa, M.Tachiki and H.Kawarada (School of Science and Engineering, Waseda University, Japan)
P2.04.9	Mechanism of single and polycrystalline diamonds synthesis V.Poliakov (Department of Mechanics, Federal University of Parana, Brazil)
P2.04.10	High pressure apparatus for diamond synthesis: An analysis of Factors Affecting the hard tools endurance P.V.Georgeoni, I.C.Popescu and G.Dinca (Dacia Synthetic Diamonds Factory, Romania)
P2.04.11	The role of the graphitization degree on the high pressure-high temperature diamond synthesis process A.L.D.Skury, G.S.Bobrovnitchii and S.N.Monteiro (Universidade Estadual do Nortee Fluminense – Centro de Ciencia e Technologia, Brasil)
P2.04.12	NV Centre Distributions in HPHT Diamond E.Trajkov^1, S.Prawer^1, N.Manson^2 and P.Munroe^3 (^1Centre for Quantum Computing Technology, School of Physics, The University of Melbourne, Australia) (^2Laster Physics Centre, Australian National University, Australia) (^3Electron Microscope Unit, University of New South Wales, Australia)
P2.04.13	Spectroscopic properties of the natural and synthetic coloured diamonds Maxim A.Viktorov^1, Galina K. Chachatryan^2, Yaroslav L. Lantsev^1 and Roman V.Shabalin^1 (^1Department of Geology, Moscow State University, Russia) (^2Institute of Diamonds, Russian Academy of Natural Sciences, Russia)
P2.04.14	Optical study of structural properties of 3H defects in Diamond I.I.Vlasov^1, V.G.Ralchenko^1 and E.Goovaerts^2 (^1General Physics Institute, Russia) (^2Department of Physics, University of Antwerp, Belgium)
P2.04.15	The structure of hollow shock-generated nanodiamonds G.S.Yurjev^2 and A.L.Vereshagin^1 (^1Siberian Centre of Synchrotron Radiation at Institute of Nuclear Physics of SB RAS, Russian Federation) (^2Biisk Technological Institute, Russian Federation)

Session P2.05: Diamond-Like Carbon

P2.05.1	Surface and quality modification of diamond-like carbon films by CO2 laser heating assisted hot filament chemical vapour deposition V.Amornkitbamrung and Ong-On Topon (Department of Physics, Khon Kaen University, Thailand)
P2.05.2	The use of multiplex IBM/PACVD method in the preparation of diamond-like films on metal substrates F.Cerny, J.Gurovic, D.Palamarchuk and M.Zoriy (Department of Physics, Czech Technical University, Czech Republic)
P2.05.3	Morphological and structural study of plasma deposited fluorocarbon films at different thickness G.Cicala^1, A.Milella^2, F.Palumbo^1, P.Favia^2 and R.d’Agostino^2 (^1Istituto di Metodologie Inorganiche e dei Plasmi, Universita di Bari, Italy) (^2Dipartimento di Chimica, Universita di Bari, Italy)
P2.05.4	Molecular dynamics simulations of structure in plasma deposited diamond-like alloys N.C.Cooper^1, M.M.M.Bilek^1, N.A.Marks^1, D.G.McCulloch^2, D.R.McKenzie^1 and A.R.Merchant^2 (^1Department of Applied and Plasma Physics, The University of Sydney, Australia) (^2Department of Applied Physics, RMIT University, Australia)
P2.05.5	A comparative study between pure and aluminium containing amorphous carbon films using FCVA with high substrate pulse biasing D.Sheeja, B.K.Tay, L.Yu and S.P.Lau (School of Electrical and Electronic Engineering, Nanyang Technological University, Singapore)
P2.05.6	Hard Amorphous carbon-fluorine films deposited by PECVD using C2H2-CF4 ags mixtures as percursor atmospheres L.G.Jacobsohn^1, M.E.H. Maia da Costa^1, V.J.Trava-Airoldi^2 and F.L.Freire Jr.^1 (^1Departamento de Fisica, Pontificia Universidade Catolica do Rio de Janeiro, Brazil) (^2Instituto Nacional de Pesquisas Espaciais, Brazil)
P2.05.7	Optical and mechanical properties of hydrogenated amorphous carbon thin films by magnetron sputtering using Ar+H2 and He+H2 gas mixtures Akira Higa, Takehiro Maehama and Minoru Toguchi (Department of Electric and Electronics engineering, University of the Ryukyus, Japan)
P2.05.8	Diffusion of self and foreign atoms in tetrahedral amorphous carbon (ta-C) H.Kroger^1, C.Ronning^1, M.Schwickert^1, H. Hofsäss^1, A.Bergmeier^2, L.Gorgens^2, P.Neumaier^2 and G.Dollinger^2 (^12^nd Physical Institute, University Gottingen, Germany) (^2Physics Department, Technical University Munich, Germany)
P2.05.9	Superhard diamond and diamond-like carbon coatings by PVD and CVD processes Ashok Kumar and A.K Sikder (Department of Mechanical Engineering, University of South Florida, USA)
P2.05.10	Nanostructuring of amorphous carbon films by C ion implantation O.Kutsay , I.Bello, Y.Lifshitz, S.T.Lee, X.Meng, V.Kremnican, C.W.Lam (Center of Super-Diamond and Advanced Films (COSDAF) and Department of Physics and Material Science, City University of Hong Kong, PR China)
P2.05.11	Effect of ion-bombardment on the deposition of a-CNx:H films in CH4/N2 rf plasma N.Mutsukura and Y.Kaigo (School of Engineering, Tokyo Denki University)
P2.05.12	Photoelectrical properties of pulsed laser deposited boron doped p-carbon/n-silicon and phosphorous doped n-carbon/p-silicon heterojunction solar cells M.Rusop^1, S.M.Mominuzzaman^3, X.M.Tian^1, T.Soga^1, T.Jimbo^1, 2 and M.Umeno^4 (^1Department of Environmental Technology and Urban Planning, Nagoya Institute of Technology, Japan) (^2Research Center for Micro Structure Devices, Nagoya Institute of Technology, Japan) (^3Department of Electrical and Electronic Engineering, Bangladesh University of Engineering & Technology, Bangladesh) (^4Department of Electronic Engineering, Chubu University, Japan)
P2.05.13	Structural and photoelectrical properties of amorphous carbon nitride films synthesized by pulsed laser deposition with different laser fluences, target to substrate distances and substrate temperatures M.Rusop^1, T.Soga^1, T.Jimbo^1, 2 (^1Department of Environmental Technology and Urban Planning, Nagoya Institute of Technology, Japan) (^2Research Center for Micro Structure Devices, Nagoya Institute of Technology, Japan)
P2.05.14	Tetrahedral and boron doped amorphous carbon films grown by pulsed laser deposition using camphoric carbon target M.Rusop^1, T.Nezasa^3, T.Kinugawa^1, T.Soga^1 and T.Jimbo^1,2 (^1Department of Environmental Technology and Urban Planning, Nagoya Institute of Technology, Japan) (^2Research Center for Micro Structure Devices, Nagoya Institute of Technology, Japan)
P2.05.15	New applications for highly stressed carbon films on silicon substrate T.Sharda, T.Soga and T.Jimbo (Department of Environmental Technology and Urban Planning, Nagoya Institute of Technology, Japan)
P2.05.16	Thermodynamic conditions of ta-C formation in thermoelastic peak of low energy ^12C^+ ion in carbon A.I.Kalinichenko^1 and V.E.Strel’nitskij^2 (^1Kharkov National University, Ukraine) (^2National Science Center, Kharkov Institute of Physics and Technology, Ukraine)
P2.05.17	Wide-aperture filtered vacuum arc system for DLC films synthesis I.I.Aksenov, V.E.Strel’nitskij, V.V.Vasilyev and A.O.Omarov (2National Science Center, Kharkov Institute of Physics and Technology, Ukraine)
P2.05.18	Tribological properties of diamond-like carbon films produced by different deposition techniques M.Suzuki^1, T.Watanabe^1, A.Tanaka^2 and Y.Koga^2 (^1 Japan Fine Ceramics Center: JFCC, Japan) (^2 Research Center for Advanced Carbon Materials, AIST, Japan)
P2.05.19	Nanocrystalline diamond films deposited by high repetition rate pulsed laser deposition (PLD) technique A.Tamanyan, G.Tamanyan, J.L.Peng, I.Andrienko, S.Prawer and V.Gurarie (School of Physics, The University of Melbourne, Australia)
P2.05.20	Tribological properties of DLC films using various precursors under different humidity conditions A.Tanaka^1, T.Nishibori^2, M.Suzuk^3i, and K.Maekawa^2 (^1 Research Center of Advanced Carbon Materials, AIST, Japan) (^2 Ibraki University, Japan) (^3Joint Research Consortium of Frontier Carbon Technology, JFCC, Japan)
P2.05.21	Study of Surface Energy of Tetrahedral Amorphous Carbon Films Modified in Various Gas Plasma B.K.Tay, D.Sheeja, S.P.Lau and J.X.Guo (School of Electrical and Electronic Engineering, Nanyang Technological University, Singapore)
P2.05.22	Morphology of DLC surface and its change at ion bombardment I.Sh.Trakhtenberg^1, A.P.Rubstein^1, S.A.Plotnikov^1, A..Vladimirov^1, A.E.Davletshin^1 and K.Uemura^2 (^1 Metal Physics Institute, Ural Branch Division RAS, Russia) (^2 ITAC Ltd, Japan)
P2.05.24	Mechanical Properties of DLC (ta-C) films deposited on orthopedic substrates W.Veiga^1, V.P.Poliakov^1, D.J de M.Siqueira^1 and G.G. Kirpilenko^2 (^1Federal University of Parana, UFPR, Brazil) (^2Patinor Coating Ltd, Russia)
P2.05.25	Characterization of metal-doped CNx films deposited by cathodic arc evaporation (CAE) Da-Yung Wang^1, Yin-Yu Chang^2 and WeiTe Wu^2 (^1Center for Applied Science and Technology, Mingdao University, Taiwan) (^2Department of Material Engineering, National Chung-Hsing University, Taiwan)
P2.05.26	Synthesis of amorphous carbon films by plasma-based ion implantation with simultaneous application of DC and pulse bias T.Watanabe^1, K.Yamamoto^2, O.Tsuda^1, Y.Koga^2, A.Tanaka^2 and O.Takai^1 (^1Japan Fine Ceramics Center, Joint Research Consortium of Frontier Carbon Technology, Japan) (^2Research Center for Advanced Carbon Materials, National Institute of Advance Industrial Science and Technology, Japan) (^3Department of Material Processing and Engineering, Nagoya University, Japan)
P2.05.27	Effect of substrate temperature on structure and chemical bonds of carbon films deposited with mass selected carbon ion beam. K.Yamamoto^1, T.Watanabe^2, K.Wazumi^2, Y.Koga^1 and S.Iijima^1 (^1 National Institute of Advanced Industrial Science and Technology: AIST, Japan) (^2 Japan Fine Ceramics Center, Joint Research Consortium of Frontier Carbon Technology, Japan)
P2.05.28	Rapid thermal Annealing Study on the metal Containing Amorphous Carbon Films P.Zhang, B.K.Tay, S.P.Lau and C.Y.Xiao (School of Electronic Engineering, Nanyang Technological University, Singapore)
P2.05.29	Golden Yellow carbon from renewable natural precursors Maheshwar Sharon^1, M.Bejoy^1 and A.K.Chatterjee^2 (^1Department of Chemistry, IIT-Bombay, India) (^2Energy System Engineering, IIT-Bombay, India)

19:00 19.30

CONFERENCE BANQUET Dinner cruise on Port Phillip Bay Depart from Victoria Harbour opposite Colonial Stadium After dinner Speaker: Prof. Robert Hazen

Friday 26 July 2002

Session 14: High Pressure and Natural Single Crystals

Chair:

M.Newton (King’s College London, UK)

8:30	14.1	Invited Presentation: “The detection of colour-enhanced and synthetic gem diamonds by optical spectroscopy” A.T.Collins (King’s College London, UK)
9:00	14.2	The Argyle Mine and its Diamonds John G. Chapman (Gemstyle Ltd, Western Australia, Australia)
9:20	14.3	What can EPR tell us about the annealing of brown type IIa and IIb natural diamond? C.Glover, A.Connor, A.T.Collins, M.E.Newton (King’s College London, UK)

09:40-10:20

COFFEE BREAK & POSTER VIEWING

Session 15: Diamond-Like Carbon

Chair:

Y.Lifshitz (City University of Hong Kong, China)

10:20	15.1	Invited Presentation: “Ultrathin tetrahedral amorphous carbon films deposited by filtered cathodic vacuum arc” S.P.Lau^1, C.Y.Xiao^1, X.Shi^2, Z.Sun^1 and B.K.Tay^1 (^1Nanyang Technological University, Singapore) (^2Nanofilm Technologies International)
10:50	15.2	Invited Presentation: “Atomistic simulation of energy and temperature effects in amorphous carbon and diamond thin films” N.A.Marks, J.Bell, H.X. Pham, D.R. McKenzie, R.N.Tarrant and M.M.M.Bilek (The University of Sydney, Australia)
11:20	15.3	The characterization of amorphous carbon films deposited by ECR plasma sputtering T.Ohana^1, T.Nakamura^1, A.Goto^2, A.Tanaka^1 and Y.Koga^1 (^1National Institute of Advanced Industrial Science and Technology: AIST, Japan) (^2Joint Research Consortium of Frontier Carbon Technology, JFCC, Japan)
11:40	15.4	Presented as poster The Effect Of Hydrogen Plasma Chemical Annealing on Electron Field Emission of Amorphous Carbon Films J.Xu, X.Huang, L.Wang, W.Li, K.Chen (Nanjing University, China)
		The Mechanism of Diamond from Energetic Species Y.Lifshitz, Th. Kohler, Th. Frauenheim, I.Guzmann, A. Hoffman, R.Q.Zhang, X.T.Zhou, S.T.Lee Centre of Superhard Diamond and Advanced Films and Department of Physics and Materials Science, City University Hong Kong, Hong Kong SAR

Session 16: Closing Session

12:00-12:20

LATE NEWS

12:20

CONFERENCE CLOSE